Apparatus and method for forming deposited film

ABSTRACT

A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.

This application is a division of Application No. 09/767,856, filed Jan.24, 2001 now U.S. Pat. No. 6,632,284.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an apparatus for forming a depositedfilm in which plasma is generated between an electrical powerapplication electrode and a substrate functioning as an electrodearranged opposite to the electrical power application electrode in avacuum container and a reactive gas introduced into the vacuum containeris decomposed to form a deposited film on the substrate.

2. Related Background Art

One of the typical examples of the clean energy sources may be a solarcell. The solar cell is an electronic device which utilizes thephotovoltaic effect of converting light energy such as solar energy intoelectrical energy, and it has lately attracted considerable attention asa part of preventive measures taken in the future against energyproblems.

Amorphous silicon has lately attracted notice as a material which canrealize a lower-cost solar cell. Amorphous semiconductors, such asamorphous silicon, have occupied attention as materials for use invarious types devices, because they can be formed into thin films and bemade large in area, their compositional degree of freedom is high, andbecause their electrical and optical properties can be controlled over awide range. For amorphous silicon, its optical absorption coefficient islarge, compared with silicon crystal, particularly for the light in thevicinity of the peak of solar energy distribution and its film formingtemperature is low. Further it has characteristics such that itsdeposited films can be formed directly from a raw material by using glowdischarge and junction formation is easily conducted. Although amorphoussilicon has such characteristics as described above and, as for theperformance, amorphous silicon having a high conversion factor hasalready been obtained, it has been desired that its costs should befurther reduced. One of the obstacles of realizing lower-cost amorphoussilicon may be that its film forming rate in the manufacturing processis low.

In a p-i-n amorphous silicon solar cell produced by the glow-dischargegas decomposition method, a deposited film has been formed in thedirection of the film thickness of an i-type semiconductor layer at afixed film forming rate, for example, at a low rate of 0.1 to 2 Å/sec;therefore, it has taken about 30 minutes to 2 hours to complete theformation of an i-type semiconductor film 4000 Å thick. As one exampleof the methods of performing high-rate film formation, an attempt hasbeen made to perform film formation utilizing 100% SiH₄ gas or 100%Si₂B₆ gas at a high rate of 5 to 100 Å/sec. Further, in Japanese PatentPublication No. 5-56850, there is disclosed a method in which a filmforming rate is increased by decreasing a distance between a powerapplication electrode and a substrate functioning as an electrode.

In the conventional apparatus for forming a deposited film, however, thedeformation of the power application electrode may sometimes make itdifficult to form a uniform deposited film. Specifically, in order toimprove the optical and electrical properties of the deposited film tobe formed, the members within the electric discharge chamber need to beheated to a desired temperature, and moreover, their temperature isfurther increased due to the collision of the particles, such aselectrons and ions, accelerated by plasma discharge against the memberswithin the electric discharge chamber. Furthermore, the deposited filmis formed on portions other than the substrate, for example, on thepower application electrode. As a result, the thermal expansion due tothe thermal energy and the stress due to the formation of the depositedfilm cause deformation of the power application electrode, and hence,generation of non-uniform plasma. This may sometimes make it difficultto form a uniform deposited film.

In Japanese Patent Publication No. 5-73327, there is disclosed anapparatus in which an electric power application electrode is split intoa plurality of electrodes and the split electrodes are largely spaced ata large distance and electrically connected to a connection member whichallows the distance between adjacent electrodes to be variable. Asimilar deformation is caused in the substrate, and however thedeformation of the substrate can be kept slight by taking preventivemeasures of, for example, fixing the substrate fast to a substrateholder, or when the substrate is in a strip form, drawing it with amagnet or applying a strong tension to it.

However, when electrically connecting adjacent split electrodes with aconnection member, as disclosed in Japanese Patent Publication No.5-73327, the thickness of the connection plate and the bolts used forconnecting the connection plate to the split electrodes affect thedistance between the electrode and the substrate as projections, whichmay cause a disturbance in plasma at such projection-like portions.Furthermore, it is difficult to arrange a plurality of split electrodesin a planar state in one plane simply by connecting the split electrodeswith a connection plate, and the decrease of the planeness of splitelectrodes, in particular in cases where the distance between theelectrode and the substrate is small, causes non-uniformity in plasma,which may sometimes give rise to variation in a film forming ratedepending on a position on the substrate.

Furthermore, as described above, in the conventional apparatus forforming a deposited film, deposited films are inevitably formed onportions other than the substrate which is an intended portion, such asthe power application electrode, because of their configuration. Thefilms formed on the portions other than the substrate which is anintended portion tend to peel, and the films having peeled become thecause of contamination and dust in the subsequent film formation. Inorder to prevent the quality degradation of the film formed on thesubstrate due to such contamination and dust, the deposited films formedon the portions other than the substrate need to be removed every timethe substrate is replaced, in addition, the power application electrodealso needs to be replaced at periodic intervals. This has prevented thecontinuous production of deposited films and may sometimes prevent theimprovement in mass production of the same. In particular, at the timeof forming a deposited film with a large area, since the powerapplication electrode becomes large, it takes a lot of time to do suchoperations as replacing and cleaning the power application electrodefrequently, which has been one of the causes of high production costs.

SUMMARY OF THE INVENTION

An object of the present invention is to provide an apparatus and methodfor forming a deposited film which enable the generation of uniformplasma required for uniform formation of a deposited film and alsoenable the cut-down of costs required for formation of the depositedfilm.

In order to attain the above object, the present invention provides anapparatus for forming a deposited film, comprising a vacuum containercontaining a pair of electrodes consisting of an electric powerapplication electrode to which electric power is applied and a substrateon which the deposited film is to be formed, in which the deposited filmis formed on the substrate by generating plasma between the substrateand the power application electrode to decompose a gas, as a rawmaterial for the deposited film, introduced into the vacuum container,wherein the power application electrode is consisted of a single planarelectrode and a plurality of split electrodes electrically connected tothe planar electrode and each having an area smaller than that of theplane of the planar electrode, and the plurality of split electrodes arearranged on the substrate-facing side of the planar electrode in such amanner as to form at least one substantially planar electrode layerhaving almost the same shape as that of the plane of the planarelectrode.

Further, the present invention provides a method of forming a depositedfilm, comprising forming a deposited film on a substrate in a vacuumcontainer containing a pair of electrodes consisting of an electricpower application electrode to which electric power is applied and thesubstrate on which the deposited film is to be formed by generatingplasma between the substrate and the power application electrode todecompose a gas, as a raw material for the deposited film, introducedinto the vacuum container, wherein the power application electrode isconsisted of a single planar electrode and a plurality of splitelectrodes electrically connected to the planar electrode and eachhaving an area smaller than that of the plane of the planar electrode,and the plurality of split electrodes are arranged on thesubstrate-facing side of the planar electrode in such a manner as toform at least one substantially planar electrode layer having almost thesame shape as that of the plane of the planar electrode.

In the apparatus or method for forming a deposited film according to thepresent invention, preferably a part of the plurality of splitelectrodes is directly contacted with the planar electrode. Andpreferably, the plurality of split electrodes are arranged on thesubstrate-facing side of the planar electrode in such a manner as toform a plurality of substantially planar electrode layers. Further,preferably, each of the areas of the split electrodes is equal to oneanother, or preferably the areas of the split electrodes differdepending on the electrode layer. Preferably, the areas of the splitelectrodes forming each electrode layer become larger so that theelectrode layers becomes closer to the planar electrode.

In the apparatus and method for forming a deposited film according tothe present invention which are constructed in the above-describedmanner, a plurality of small-sized planar electrodes, that is, splitelectrodes are arranged on a single planar electrode in such a manner asto face a substrate. Therefore, even if the small-sized electrodes aredeformed by heat of a heater or plasma or by stress caused by thedeposited film formed on the surface of small-sized planar electrodes(split electrodes), the deformation per small-sized planar electrode issmall compared with that of the power application electrode consistingof a single plate not split. Thus, the planeness of the entire electrodelayer formed by arranging small-sized planar electrodes (splitelectrodes) is increased to result in stabilizing the distance betweenthe power application electrode and the substrate, wherebynon-uniformity in plasma due to the variation in distance between theelectrodes can be controlled.

Further, since the small-sized planar electrodes (split electrodes) aresmall in size and light in weight compared with the power applicationelectrode consisting of a single non-split plate, the maintenance suchas replacement of the small-sized planar electrodes can be performedeasily.

Each small-sized planar electrode is arranged in such a manner as to bein direct contact with the planar electrode.

Further, the power application electrode may include a plurality ofsplit electrodes as intermediate planar electrodes provided between theplanar electrode and the split electrodes as small-sized planarelectrodes, the intermediate planar electrodes being arranged in such amanner as to form a substantially planar plane having almost the sameshape as the plane of the planar electrode and electrically connect theplanar electrode and the small-sized planar electrodes, and each of theintermediate planar electrodes having an area smaller than that of theplane of the planar electrode. In this case, because of the existence ofa plurality of split electrodes as intermediate planar electrodesbetween the planar electrode and the split electrodes as small-sizedplanar electrodes, the small-sized planar electrodes (split electrodes)are subjected to less heat loading, whereby the deformation of thesmall-sized planar electrodes is further inhibited.

The power application electrode may include a plurality of electrodelayers which are consisted of split electrodes as intermediate planarelectrodes such that the electrode layers are formed by stacking theplanar planes consisting of the intermediate planar electrodes. In thiscase, the small-sized planar electrodes are subjected to much less heatloading.

The areas of the split electrodes as intermediate planar electrodesforming a plurality of electrode layers may be larger than those of thesplit electrodes as small-sized planar electrodes, and the areas of thesplit electrode as intermediate planar electrodes forming a plurality ofelectrode layers may become larger layer by layer from the small-sizedplanar electrode layer toward the planar electrode. In this case, thedecrease in conductivity between the planar electrode and eachsmall-sized planar electrode can be inhibited because the areas of theintermediate planar electrodes are made larger than those of thesmall-sized planar electrodes, whereby the electric power applied to theplanar electrode can be uniformly supplied to each small-sized planarelectrode.

The area of each split electrode as an intermediate planar electrode maybe substantially equal to the area of each split electrode as ansmall-sized planar electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional side view of one example of theapparatus for forming a deposited film according to the first embodimentof the present invention;

FIG. 2 is a schematic perspective view of the power applicationelectrode of the deposited-film forming apparatus shown in FIG. 1;

FIG. 3 is a schematic perspective view of the power applicationelectrode of the apparatus for forming a deposited film according to thesecond embodiment of the present invention;

FIG. 4 is a schematic perspective view of the power applicationelectrode of the apparatus for forming a deposited film according to thethird embodiment of the present invention;

FIG. 5 is a perspective view showing the dimensions of the powerapplication electrode used in Example 1 of the present invention;

FIG. 6 is a schematic representation showing the thickness distributionof the deposited film formed on a strip substrate when utilizing thepower application electrode used in Example 1 of the present invention;

FIG. 7 is a graph showing the relationship between a film forming rateand a position on the strip substrate when utilizing the powerapplication electrode used in Example 1 of the present invention;

FIG. 8 is a perspective view showing the dimensions of the powerapplication electrode used in Example 2 of the present invention;

FIG. 9 is a perspective view showing the dimensions of the powerapplication electrode used in Example 3 of the present invention; and

FIG. 10 is a graph showing the relationship between a film forming rateand a position on the strip substrate in an apparatus for forming adeposited film utilizing a conventional single-plate-type powerapplication electrode.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, embodiments of the present invention will be describedwith reference to the accompanied drawings.

(First Embodiment)

FIG. 1 shows a schematic sectional side view of one example of apparatusfor forming a deposited film according to this embodiment, and FIG. 2shows a schematic perspective view of the power application electrode ofthe apparatus for forming a deposited film according to this embodiment.

The apparatus for forming a deposited film according to this embodimentis that of parallel plate capacitance coupled type. The apparatus forforming a deposited film includes, in a vacuum container 302, adischarge chamber 305 having a block heater 309 therein, a film formingregion opening regulating plate 311 for regulating the area of adeposited film formed on a strip substrate 301, an electric powerapplication electrode 306 to which electric power (not shown in thedrawings) supplied from a power supply provided outside is applied, anda group of lamp heaters 313 provided with a reflector 315 for generatingradiant heat for heating the strip substrate 301.

The vacuum container 302 has openings formed on both its sidewalls,wherein the opening is communicated with a gas gate 303 which isprovided with a gate gas introducing pipe 317 for introducing a gate gasto maintain the internal pressure of the vacuum container 302. The stripsubstrate 301 passes through the gas gate 303 and is conveyed to theinside of the vacuum container 302 while being supported by a supportingroller 316. An exhaust pipe 308 is provided on the bottom wall of thevacuum container 302, the exhaust pipe being in communication with anexhaust apparatus such as a vacuum pump (not shown in the drawings) forreducing the internal pressure of the vacuum container 302 to a desiredvacuum pressure. The exhaust pipe 308 has a discharge chamber outsideexhaust opening 310 formed thereon for exhausting the vacuum container302 except for the discharge chamber 305. A lid 312 is provided with athermocouple 314 for measuring the internal temperature of the vacuumcontainer 302. The vacuum container 302 is connected in series toanother vacuum container not shown in the drawings.

The discharge chamber 305 has a hollow rectangular structure with anopening formed on the upper side thereof and facing the strip substrate301. The block heater 309 arranged inside the discharge chamber 305 isfor heating raw material gases introduced from a raw material gasintroducing pipe 307.

The power application electrode 306 has a two-layer structure includinga planar electrode (non-split electrode) 102 consisting of a singleplanar plate and split electrodes 101 arranged on the non-splitelectrode 102 in such a manner as to electrically come into contact withthe non-split electrode 102, as shown in FIG. 2. Each of the splitelectrodes 101 faces the strip substrate 301 in parallel, and the splitelectrodes 101 are arranged in such a manner as to allow their surfacesfacing the strip substrate 301 to form a single planar plane. In otherwords, the split electrodes 101 and the strip substrate 301 areconstructed in such a manner that the distance between the surface ofeach split electrode 101 facing the strip substrate 301 and the stripsubstrate 301 are uniform. And the total area of the surfaces of thesplit electrodes 101 facing the strip substrate 301 is substantiallyequal to the area of the surface of the non-split electrode 102 on whichthe split electrodes 101 are mounted. The materials of the powerapplication electrode 306 are preferably aluminum, iron and stainlesssteel having a small electric resistance. It is to be understood that inthe present embodiment the number of split electrodes 101, the directionof splitting, and the shape of each split electrode 101 are not intendedto be limited to those shown in FIG. 2. Reference numeral 801 a denotesan electrode layer.

The distance between the surface of each split electrode 101 facing thestrip substrate 301 and the strip substrate 301 is preferably 50 mm orless so as to increase the film forming rate, and more preferably 10 mmor more and 30 mm or less. The power application electrode 306 iselectrically connected to one terminal of a power supply via a matchingbox not shown in the drawings, so that electric power of low-frequencyin the range of 5 kHz to 500 kHz, high frequency in the range of 500 kHzto 30 MHZ or VHF in the range of 30 MHZ to 500 MHZ is applied to theplanar electrode (non-split electrode) 102. This means that the externalelectric power is first applied directly to the planar (non-splitelectrode) electrode 102, and then applied to each split electrode 101from the non-split electrode 102. The other terminal of the power supplyis grounded.

The strip substrate 301 is an elongated substrate in a strip form woundaround a drum not shown in the drawings and consists of a flexibleinsulator, such as a high polymer film, having a conductive thin filmformed thereon. A flexible conductive substrate such as stainless steelmay be used as the strip substrate 301. Instead of the strip substrateas described above, a light-transmissive insulator such as a glasssubstrate and a non-light-transmissive conductor such as a stainlesssteel substrate both of which are mounted on a substrate support may beused. This strip substrate 301, in combination with the powerapplication electrode 306, constitutes a pair of electrodes forgenerating plasma as described later.

The raw material gases introduced through the raw material gasintroducing pipe 307 are material gases for forming semiconductors, suchas SiH₄ and Si₂H₆, and H₂ and He, and they can be used to form asilicon-based non-single-crystalline deposited film such as amorphous,microcrystalline and polycrystalline deposited films when decomposed byplasma.

In the following, the outline of the procedure for forming a depositedfilm using an apparatus for forming a deposited film according to thepresent embodiment will be described.

First, the vacuum container 302 is exhausted with an exhaust apparatus.Then raw material gases are introduced through the raw material gasintroducing pipe 307, and the introduced raw material gases are heatedwith the block heater 309 while heating the strip substrate 301 with thelamp heater 313. Plasma is generated between the power applicationelectrode 306 and the strip substrate 301 by applying electric power tothe power application electrode 306, and the raw material gases aredecomposed by the plasma to form a deposited film on the strip substrate301. As the plasma generated, low-frequency plasma, high-frequencyplasma or VHF plasma can be generated by selecting as the electric powerapplied to the power application electrode 306, for example,low-frequency power in the range of 5 kHz to 500 kHz, high-frequencypower in the range of 500 kHz to 30 MHZ or VHF power in the range of 30MHZ to 500 MHZ.

The power application electrode 306 consists of a non-split electrode102 and a plurality of split electrodes 101 arranged on the non-splitelectrode, each of the split electrode 101 having an area smaller thanthat of the planar electrode (non-split electrode) 102. Therefore, evenwhen the split electrodes 101 are deformed by heat of a heater or plasmaor by stress caused by the deposited film formed on the surface of thesplit electrodes 101, the deformation per split electrode is smallcompared with that of the power application electrode consisting of asingle non-split plate. Thus, the planeness of the entire surface of thepower application electrode 306 facing the strip substrate 301 isincreased, thereby resulting in stabilization of the distance betweenthe power application electrode 306 and the strip substrate 301.Non-uniformity in plasma due to the variation in distance between theelectrodes can thereby be inhibited.

Further, since the split electrodes 101 are small and lightweightcompared with the power application electrode consisting of a singlenon-split plate, the maintenance, such as replacement of the splitelectrodes 101, can be performed easily.

As described above, according to the apparatus for forming a depositedfilm of the present embodiment, since the power application electrode306 is constructed in such a manner as to include a plurality of splitelectrodes 101, non-uniformity in plasma can be inhibited, andtherefore, a deposited film of a desired thickness having a large areacan be formed. Furthermore, the improvement in maintainability enablescutting-down of the costs required to form deposited films.

(Second Embodiment)

The power application electrode 306 a for use in an apparatus forforming a deposited film of the present embodiment has a four-layerstructure including a planar electrode (non-split electrode) 604consisting of a single planar plate and a third, a second and a firstsplit electrodes 603, 602 and 601 each of which are split into 8electrodes and stacked on the planar electrode (non-split electrode) 604one by one in this order, as shown in FIG. 3. The individual electrodesof each of the first, second and third split electrodes 601, 602 and 603are all the same in shape, and the surface area of the non-splitelectrode 604 on which each split electrode is mounted is substantiallythe same as the total area of the surfaces of the first split electrode601 facing the strip substrate. It goes without saying that the totalarea of the surfaces of the first split electrodes 601 facing the stripsubstrate, the total area of the surfaces of the third split electrodes603 on which the second split electrodes 602 are mounted, and the totalarea of the surfaces of the second split electrodes 602 on which thefirst split electrodes 601 are mounted are all substantially the same.In the present embodiment, one example of the power applicationelectrodes 306 a has been given which includes split electrodes stackedon the non-split electrode 604 in three layers, in other words, whichconsists of the non-split electrode 604 holding split electrodes on itsupper side surface, the first split electrodes 601 facing the stripsubstrate 301, and the second and third split electrodes 602 and 603arranged between the non-split electrode 604 and the first splitelectrodes 601 in such a manner as to form layers, as shown in FIG. 3.However, it is to be understood that in the present embodiment thenumbers of split electrodes and electrode layers, the direction ofsplitting, and the shape of each split electrode are not limited tothose shown in FIG. 3. Reference numerals 801 a, 801 b, 801 c and 801 ddenote electrode layers.

The apparatus for forming a deposited film in accordance with thepresent embodiment is constructed basically in the same manner as theone described in the first embodiment except the points described above,therefore its detailed description shall be omitted.

In the present embodiment, the surface of the power applicationelectrode 306 a facing the strip substrate consists of the first splitelectrodes 601, therefore, its deformation due to heat or stress causedby the deposited film formed thereon can be inhibited. In addition,since it is constructed in such a manner as to include between the firstsplit electrodes 601 and the non-split electrode 604 a plurality ofsplit electrode layers, that is, the second and third split electrodes602 and 603, the heat applied per split electrode is dispersed, thedeformation of the first split electrodes 601 is thereby furtherinhibited. Thus, the planeness of the entire surface of the powerapplication electrode 306 a facing the strip substrate is increased,thereby resulting in stabilization of the distance between the powerapplication electrode 306 a and the strip substrate. Non-uniformity inplasma due to the variation in distance between the electrodes canthereby be inhibited.

Further, since the split electrodes are small and lightweight comparedwith the power application electrode consisting of a single non-splitplate, the maintenance, such as replacement of the split electrodes, canbe performed easily.

As described above, according to the apparatus for forming a depositedfilm of the present embodiment, like the first embodiment, a depositedfilm of a desired thickness having a large area can be formed, andmoreover, the improvement in maintainability enables cutting-down of thecosts required to form a deposited film.

(Third Embodiment)

The power application electrode 306 b for use in an apparatus forforming a deposited film of the present embodiment has a four-layerstructure including a non-split electrode 704 consisting of a singleplanar plate and a third, a second and a first split electrodes 703, 702and 701 which are stacked on the planar electrode (non-split electrode)704 one by one in this order, in which the number of the splitelectrodes in the layers becomes larger from the bottom layer upward, asshown in FIG. 4. The surface area of the planar electrode (non-splitelectrode) 704 on which each split electrode is mounted is substantiallythe same as the total area of the surfaces of the first split electrode701 facing the strip substrate. Further, the total area of the surfacesof the first split electrodes 701 facing the strip substrate, the totalarea of the surfaces of the third split electrode 703 on which thesecond split electrodes 702 are mounted, and the total area of thesurfaces of the second split electrodes 702 on which the first splitelectrodes 701 are mounted are all substantially the same. In thepresent embodiment, one example of the power application electrodes 306b has been given which includes split electrodes stacked on thenon-split electrode 704 in three layers different in splitting number,in other words, which consists of: the non-split electrode 704 forholding split electrodes on its upper side surface, the first splitelectrodes 701 facing the strip substrate, and the second and thirdsplit electrodes 702 and 703 arranged between the non-split electrode704 and the first split electrodes 701 in such a manner as to formlayers, the area of each electrode in the layers becoming larger fromthe top layer downward, as shown in FIG. 4. However, it is to beunderstood that in the present embodiment the numbers of splits andelectrode layers, the direction of splitting, and the shape of eachsplit electrode are not limited to those shown in FIG. 4. An example ofthe power application electrodes 306 b has been given which includessplit electrode layers the split electrode number of which becomeslarger from the bottom layer upward; however, it is also to beunderstood that the order of stacking layers is not limited to this.Reference numerals 801 a, 801 b, 801 c and 801 d denote electrodelayers.

The apparatus for forming a deposited film in accordance with thepresent embodiment is constructed basically in the same manner as theone described in the first embodiment except the points described above;accordingly its detailed description shall be omitted.

In the present embodiment, the surface of the power applicationelectrode 306 b facing the strip substrate consists of the first splitelectrodes 701, therefore, its deformation due to heat or stress causedby the deposited film formed thereon can be inhibited. In addition,since it is constructed to include a plurality of split electrodelayers, that is, the second and third split electrodes 702 and 703, thedeformation per split electrode caused by heat is further inhibited.Furthermore, since it is constructed in such a manner that the number ofsplitting in the electrode layers becoming smaller from the topmostelectrode layer, which is most likely to be deformed, downward, thedecrease in conductivity can be inhibited, the uniform supply ofelectric power from the non-split electrode 704 to each of the firstsplit electrodes 701 can thereby be realized.

Thus, the planeness of the entire surface of the power applicationelectrode 306 a facing the strip substrate is increased, therebyresulting in stabilization of the distance between the power applicationelectrode 306 b and the strip substrate. At the same time,non-uniformity in plasma can be inhibited by the uniform supply ofelectric power to each of the first split electrodes 701.

Further, since the split electrodes are small and lightweight comparedwith the power application electrode consisting of a single non-splitplate, the maintenance, such as replacement of the split electrodes, canbe performed easily.

As described above, according to the apparatus for forming a depositedfilm of the present embodiment, like the first and second embodiments, adeposited film of a desired thickness having a large area can be formed,and moreover, the improvement in maintainability enables cutting-down ofthe costs required to form deposited films.

While the present invention has been described in the first to thirdembodiments, it is to be understood that the present invention is notlimited to these embodiments. In the following, examples of the first tothird embodiments will be shown; however, it is also to be understoodthat the present invention is not limited to these examples.

First, an example of the first embodiment will be described below.

EXAMPLE 1

In this example, as an apparatus for forming a deposited film, aparallel plate type apparatus in accordance with the first embodiment,as shown in FIG. 1, was used and, as an electrode to which electricpower is applied, a two-layer structure power application electrode 306including a planar electrode (non-split electrode) 102 consisting of asingle planar plate and split electrodes 101 arranged on the planarelectrode (non-split electrode) 102, as shown in FIG. 2, was used.

As the power application electrode 306, the electrode of 100 mm thickincluding the non-split electrode 102, which is 848 mm in length, 500 mmin width and 50 mm in thickness, and eight split electrodes 101, each ofwhich is 106 mm in length, 500 mm in width and 50 mm in thickness,arranged on the top of the non-split electrode 102 was used.

VHF electric power of 300 W and 60 MHZ was applied to the powerapplication electrode 306, the distance between the split electrodes 101and the strip substrate 301 was set to 20 mm, and the averagetemperature within the vacuum container 302 was set to 300° C. As rawmaterial gases, SiH₄ and H₂ were used.

FIG. 6 shows a schematic representation of the thickness distribution,in which each portion of the constant thickness of a deposited film isshown by the same line pattern (constant-thickness line), of thedeposited film formed on the strip substrate 301 when utilizing theapparatus for forming a deposited film in accordance with the firstembodiment of the present invention under the above conditions.

In FIG. 6, the line B is a center line parallel to the long sides of thestrip substrate 301 and the broken line A is a line parallel to the lineB which shows the position apart by 10% of the short side length of thestrip substrate from the edge of the strip substrate 301.

FIG. 7 shows a graph exhibiting the film forming rate when the positionof the raw material gas introducing portion is defined as the origin Oand the position is defined as positive in the flow direction of the rawmaterial gases.

In FIG. 7, the solid line shows the line B shown in FIG. 6, that is, thefilm forming rate distribution in the central portion of the stripsubstrate 301 and the broken line shows the broken line A shown in FIG.6, that is, the film forming rate distribution at the position apart by10% of the short side length of the strip substrate from the edge of thestrip substrate 301. There may be various methods of evaluating thenon-uniformity in film forming rate; however, in this example, the ratioof maximum value of the film forming rate at the central portion (lineB) to at the edge portion (line A) was calculated. The result was asgood as 5%.

EXAMPLE 2

Then an example of the second embodiment will be described below.

In this example, a parallel plate type apparatus for forming a depositedfilm in accordance with the second embodiment was used, so as to form adeposited film on the strip substrate. Specifically, as the powerapplication electrode 306 a, this example employed the four-layerstructure electrode of 200 mm thick including the planar electrode(non-split electrode) 604 being 848 mm in length, 500 mm in width and 50mm in thickness, eight third split electrodes 603 each being 106 mm inlength, 500 mm in width and 50 mm in thickness, arranged on the top ofthe planar electrode (non-split electrode) 604, and eight second splitelectrodes 602 and eight first split electrodes 601 each having the sameshape as the third split electrodes 603 and stacked on the third splitelectrodes 603 in this order, as shown in FIG. 8.

The distance between the first split electrodes 601 and the stripsubstrate was 20 mm and the electric power applied to the powerapplication electrode 306 a was VHF electric power of 300 W and 60 MHZ,just like Example 1. Further, the set temperature within the vacuumcontainer 302 and the raw material gases used were the same as inExample 1.

In order to evaluate the non-uniformity in film forming rate on thestrip substrate 301 when using the apparatus for forming a depositedfilm as described above, the ratio of the maximum value of the filmforming rate at the central portion (line B) to at the edge portion(line A) was calculated, just like Example 1. The result was 3% whichwas better than that of Example 1. This may be because the deformationin the power application electrode was much more absorbed by theincreased number of the split electrodes, thereby increasing theplaneness of the entire surface of the first split electrodes 601.

EXAMPLE 3

Then an example of the third embodiment will be described below.

In this example, a parallel plate type apparatus for forming a depositedfilm in accordance with the third embodiment was used, so as to form adeposited film on the strip substrate. Specifically, as the powerapplication electrode 306 b, this example employed the four-layerstructure electrode of 200 mm thick including the planar electrode(non-split electrode) 704 being 848 mm in length, 500 mm in width and 50mm in thickness, two third split electrodes 703 each being 424 mm inlength, 500 mm in width and 50 mm in thickness, arranged on the top ofthe planar electrode (non-split electrode) 704, four second splitelectrodes 702 each being 212 mm in length, 500 mm in width and 50 mm inthickness, arranged on the third split electrodes 703, and eight firstsplit electrodes 701 each being 106 mm in length, 500 mm in width and 50mm in thickness, arranged on the second split electrodes 702, as shownin FIG. 9.

The distance between the first split electrodes 701 and the stripsubstrate was 20 mm, and the electric power applied to the powerapplication electrode 306 a was VHF electric power of 300 W and 60 MHZ,just like Examples 1 and 2. Further, the set temperature within thevacuum container 302 and the raw material gases used were the same as inExamples 1 and 2.

In order to evaluate the non-uniformity in film forming rate on thestrip substrate when using the apparatus for forming a deposited film asdescribed above, the ratio of the maximum value of the film forming rateat the central portion (line B) to at the edge portion (line A) wascalculated, just like Examples 1 and 2. The result was 3% which wasbetter than that of Example 1.

This may be because, though the number of the split electrodes was smallcompared with the case of Example 2 and the absorption of thedeformation in the power application electrode was decreased, theconductivity was improved due to the decrease in number of the splitelectrodes, whereby uniform electric power could be applied.

COMPARATIVE EXAMPLE 1

FIG. 10 shows the film forming rate distribution when using the parallelplate type apparatus for forming a deposited film in accordance with thefirst embodiment, as shown in FIG. 1, and a non-split power applicationelectrode consisting of a single planar plate being 848 mm in length,500 mm in width and 100 mm in thickness, as a comparative example.

The solid and broken lines in FIG. 10 mean the same as those inExample 1. Specifically, the solid line shows the film forming ratedistribution at the central portion B of the strip substrate and thebroken line shows the film forming rate distribution at the position Aapart by 10% of the short side length of the strip substrate from theedge of the strip substrate.

Deformations such as warp and bow were caused in the power applicationelectrode due to the factors such as thermal expansion, plasmairradiation and deposited film formed on the power applicationelectrode, and a significant difference was generated between the filmforming rate distributions at the central portion and at the edgeportion. The ratio of the maximum value of the film forming rate at thecentral portion (line B) to at the edge portion (line A) was as large as30%.

As described above, according to the present invention, since aplurality of small-sized planar electrodes are arranged on a planarelectrode in such a manner as to face a substrate, the planeness of theentire surface facing the substrate is increased, non-uniformity inplasma due to the variation in distance between the electrodes canthereby be inhibited. Further, since the small-sized planar electrodesare small and lightweight compared with the power application electrodeconsisting of a single plate, the maintenance, such as replacement ofthe small-sized electrodes, can be performed easily, thereby enablingcutting-down of the costs required to form deposited films.

1. A method of forming a deposited film comprising: (a) introducing agas as a raw material for forming the deposited film into a vacuumcontainer; and (b) forming the deposited film on a substrate in thevacuum container containing a pair of electrodes consisting of anelectric power application electrode to which electric power is appliedand the substrate on which the deposited film is to be formed bygenerating plasma between the substrate and the power applicationelectrode to decompose the gas, wherein the power application electrodeconsists of a single planar electrode and a plurality of splitelectrodes electrically connected to the planar electrode, each of thesplit electrodes having an area smaller than an area of a plane of theplanar electrode, and wherein the plurality of split electrodes arearranged on a substrate-facing side of the planar electrode so as toform at least one substantially planar electrode layer having almost thesame shape as the plane of the planar electrode.
 2. The method offorming a deposited film according to claim 1, wherein a part of theplurality of split electrodes are in direct contact with the planarelectrode.
 3. The method of forming a deposited film according to claim1, wherein the plurality of split electrodes are arranged on asubstrate-facing side of the planar electrode so as to form a pluralityof substantially planar electrode layers.
 4. The method of forming adeposited film according to claim 3, wherein each area of the splitelectrodes are all the same.
 5. The method of forming a deposited filmaccording to claim 3, wherein each area of the split electrodes differsdepending on the electrode layers.
 6. The method of forming a depositedfilm according to claim 3, wherein each area of the split electrodesforming each electrode layer become larger in the electrode layer nearthe planer electrode than in the electrode layer far from the planarelectrode.